Comparison of Commercial Planar and Trench SiC MOSFETs by Electrical Characterization of Performance-Degrading Near-Interface Traps

The suboptimal performance and low channel-carrier mobility of silicon carbide (SiC) power MOSFETs are attributed to a high density oxide traps near the 4H-SiC/SiO2 interface. In this article, commercial 1200-V SiC trench MOSFET has been compared with planar obtained from same manufacturer. We employed newly developed integrated-charge method quantify near-interface (NITs). results reveal that, at operating gate voltages, 15% total channel electrons were trapped for longer than 500 ns in 9% MOSFET.